S8050 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 20V Collector−Base Voltage (VCBO) 30V Continuous Collector Current (Ic) 700mA Emitter Base Voltage (VEBO) 5V Operating Temperature Range -65 – 150°C DC Current Gain (hFE) 120-400 Current Gain Bandwidth (fT) 100MHz Output Capacitance (Cob) 9pF Related Documents:- S8050 Transistor Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.
